Description

The NP3403MR uses advanced trench

technology to provide excellent RDS(ON)

General Features

, low gate

charge and operation with gate voltages as low as

2.5V. This device is suitable for use as a load switch

or in PWM applications.  VDS =-30V，ID R =-2.6A

DS(ON)(Typ.)=84mΩ @VGS

R =-4.5V

DS(ON)(Typ.)=110mΩ @VGS

 High power and current handing capability

=-2.5V

 Lead free product is acquired

 Surface mount package

Application

 PWM applications

 Load switch

20V/4A/PMOSNP340334073415兼容万代_20V/4A/PMOSNP340334073415热线13823513305-深圳市恒佳盛电子有限公司

parameter symbol limit unit

Drain-source voltage V -30 DS V

Gate-source voltage V ±12 GS V

Drain current-continuousa -pulse d

@Tj=125℃ I b -2.6 D A I -12 DM A

Drain-source Diode forward current Is -1.25 A

Maximum power dissipation P 1 D W

Operating junction Temperature range Tj -55—150 ℃

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Description

The NP3407VR uses advanced trench technology

to provide excellent RDS(ON)

 V

, low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications.

General Features

DS =-30V，PMOS管NP3403/3407/3415兼容新洁能，ID R =-4A

DS(ON)(Typ.)=62mΩ @VGS=-4.5V

RDS(ON)(Typ.)=45mΩ @VGS

 High power and current handing capability

=-10V  Lead free product is acquired

 Surface mount package

Application

 PWM applications

 Load switch

Package

 SOT-23

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Parameter Symbol Condition Min Typ Max Unit

OFF Characteristics

Drain-source breakdown voltage BVDSS VGS=0V, ID=-250µA -30 - - V

Zero gate voltage drain current IDSS VDS=-30V, VGS=0V - - -1 µA

Gate-body leakage IGSS VDS=0V, VGS=±20V - - ±100 nA

ON Characteristics

Gate threshold voltage VGS(th) VDS=VGS, ID=-250µA -0.7 -1.3 -2.5 V

Drain-source on-state resistance RDS(ON)

VGS=-10V, ID=-4A 45 65

mΩ

VGS=-4.5V, ID=-3A - 62 90

Forward transconductance gfs VDS=-5V, ID=-4A - 10 - S

Dynamic Characteristics

Input capacitance CISS

VDS=-10V ,VGS=0V

f=1.0MHz

- 700 -

pF Output capacitance COSS - 120 -

Reverse transfer capacitance CRSS - 75 -

Switching Characteristics

Turn-on delay time tD(ON) VDD=-15V ID=-4A，VGEN=-10V RL=10ohm 

RGEN=6ohm

- 9 -

ns

Rise time tr - 5 -

Turn-off delay time tD(OFF) - 28 -

Fall time tf - 12.5 -

Total gate charge Qg

VDS=-15V,ID=-4A， VGS=-4.5V

- 14 -

nC Gate-source charge Qgs - 3.1 -

Gate-drain charge Qgd - 3 -

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三极管NP340334073415兼容3407 3415 3410_20V/4A/PMOSNP340334073415一级代理-深圳市恒佳盛电子有限公司

20V P-Channel Enhancement Mode MOSFET

Description

The NP3415EVR uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This device

is suitable for use as a load switch or in PWM

applications.

General Features

 VDS =-20V，ID =-4A

RDS(ON)(Typ.)=46mΩ @VGS=-2.5V

RDS(ON)(Typ.)=38mΩ @VGS=-4.5V

 High power and current handing capability

 Lead free product is acquired

 Surface mount package

 ESD Rating: 2500V HBM

Application

 PWM applications

 Load switch

Package

 SOT-23

三极管NP340334073415一级代理_20V/4A/PMOSNP340334073415热线13823513305-深圳市恒佳盛电子有限公司

Part Number Storage Temperature Package Devices Per Reel

NP3415EVR-G -55°C to +150°C SOT-23 3000

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Notes:

a. surface mounted on FR4 board,t≤10sec

b. pulse test: pulse width≤300μs,duty≤2%

c. guaranteed by design, not subject to production testing

Thermal Characteristics

Thermal Resistance junction-to ambient Rth JA 100 ℃/W

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显示器IC74HC245/FM6363B兼容东芝VHC245_74HC245K/电视机IC兼容集创北方ICND22163-深圳市恒佳盛电子有限公司