Description

The NP3403MR uses advanced trench

technology to provide excellent RDS(ON)

General Features

, low gate

charge and operation with gate voltages as low as

2.5V. This device is suitable for use as a load switch

or in PWM applications.  VDS =-30V，深圳市恒佳盛电子有限公司,30V/4A/PMOSNP340334073415兼容3400 3401 3403,恒佳盛电子,ID R =-2.6A

DS(ON)(Typ.)=84mΩ @VGS

R =-4.5V

DS(ON)(Typ.)=110mΩ @VGS

 High power and current handing capability

=-2.5V

 Lead free product is acquired

 Surface mount package

Application

 PWM applications

 Load switch

马达ICTC8301兼容117 118_电动牙刷驱动IC电动玩具IC富满662K兼容6206-3.3V-深圳市恒佳盛电子有限公司

parameter symbol limit unit

Drain-source voltage V -30 DS V

Gate-source voltage V ±12 GS V

Drain current-continuousa -pulse d

@Tj=125℃ I b -2.6 D A I -12 DM A

Drain-source Diode forward current Is -1.25 A

Maximum power dissipation P 1 D W

Operating junction Temperature range Tj -55—150 ℃

小家电充电ICLN4056H代替4056_LN4913霍尔开关/LN4056H-深圳市恒佳盛电子有限公司

XT4054充电IC/LN6291兼容4054_小家电升压IC电动玩具IC-深圳市恒佳盛电子有限公司

电机ICTC8301兼容118SS_电动牙刷驱动IC电动玩具IC富满662K兼容6206-3.3V-深圳市恒佳盛电子有限公司

Description

The NP3407VR uses advanced trench technology

to provide excellent RDS(ON)

 V

, low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications.

General Features

DS =-30V，ID R =-4A

DS(ON)(Typ.)=62mΩ @VGS=-4.5V

RDS(ON)(Typ.)=45mΩ @VGS

 High power and current handing capability

=-10V  Lead free product is acquired

 Surface mount package

Application

 PWM applications

 Load switch

Package

 SOT-23

ESOP8封装LN4056H代替4056_单节锂电充电LN4056H代理商-深圳市恒佳盛电子有限公司

原装LN4056H兼容代替TC4056.TP4056_单节锂电充电LN4056H代理商-深圳市恒佳盛电子有限公司

Parameter Symbol Condition Min Typ Max Unit

OFF Characteristics

Drain-source breakdown voltage BVDSS VGS=0V, ID=-250µA -30 - - V

Zero gate voltage drain current IDSS VDS=-30V, VGS=0V - - -1 µA

Gate-body leakage IGSS VDS=0V, VGS=±20V - - ±100 nA

ON Characteristics

Gate threshold voltage VGS(th) VDS=VGS, ID=-250µA -0.7 -1.3 -2.5 V

Drain-source on-state resistance RDS(ON)

VGS=-10V, ID=-4A 45 65

mΩ

VGS=-4.5V, ID=-3A - 62 90

Forward transconductance gfs VDS=-5V, ID=-4A - 10 - S

Dynamic Characteristics

Input capacitance CISS

VDS=-10V ,VGS=0V

f=1.0MHz

- 700 -

pF Output capacitance COSS - 120 -

Reverse transfer capacitance CRSS - 75 -

Switching Characteristics

Turn-on delay time tD(ON) VDD=-15V ID=-4A，VGEN=-10V RL=10ohm 

RGEN=6ohm

- 9 -

ns

Rise time tr - 5 -

Turn-off delay time tD(OFF) - 28 -

Fall time tf - 12.5 -

Total gate charge Qg

VDS=-15V,ID=-4A， VGS=-4.5V

- 14 -

nC Gate-source charge Qgs - 3.1 -

Gate-drain charge Qgd - 3 -

马达ICTC8301_马达IC电动玩具IC-深圳市恒佳盛电子有限公司

原装LN4056H充电管理IC_单节锂电充电LN4056H资料-深圳市恒佳盛电子有限公司

20V P-Channel Enhancement Mode MOSFET

Description

The NP3415EVR uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This device

is suitable for use as a load switch or in PWM

applications.

General Features

 VDS =-20V，ID =-4A

RDS(ON)(Typ.)=46mΩ @VGS=-2.5V

RDS(ON)(Typ.)=38mΩ @VGS=-4.5V

 High power and current handing capability

 Lead free product is acquired

 Surface mount package

 ESD Rating: 2500V HBM

Application

 PWM applications

 Load switch

Package

 SOT-23

上海南麟LN6291兼容4054_LN6206兼容6206/电动玩具IC-深圳市恒佳盛电子有限公司

Part Number Storage Temperature Package Devices Per Reel

NP3415EVR-G -55°C to +150°C SOT-23 3000

上海南麟LN4056H代替LP4056,CL4056_单节锂电充电LN4056H资料-深圳市恒佳盛电子有限公司

Notes:

a. surface mounted on FR4 board,t≤10sec

b. pulse test: pulse width≤300μs,duty≤2%

c. guaranteed by design, not subject to production testing

Thermal Characteristics

Thermal Resistance junction-to ambient Rth JA 100 ℃/W

SOT23-6封装LN6291南麟电子_小家电升压IC电动玩具IC-深圳市恒佳盛电子有限公司

TC8301马达驱动_富满6206-662K/电动玩具IC-深圳市恒佳盛电子有限公司

1A电流充电ICLN4056H充电管理IC_单节锂电充电LN4056H资料-深圳市恒佳盛电子有限公司

封装SOP8TC8301兼容118SS_电动牙刷驱动IC电动玩具IC富满662K兼容6206-3.3V-深圳市恒佳盛电子有限公司

相关资讯查看